MMIX1T550N055T2 N-Channel MOSFET, 550 A, 55 V GigaMOS, HiperFET, 24-Pin SMPD IXYS [MMIX1T550N055T2]; 875-2500
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 550 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SMPD |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Width | 23.25mm |
| Series | GigaMOS, HiperFET |
| Height | 5.7mm |
| Length | 25.25mm |
| Maximum Operating Temperature | +175 °C |