MDD2N60RH N-Channel MOSFET, 1.9 A, 600 V, 3-Pin DPAK MagnaChip [MDD2N60RH]; 871-6637
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Height | 2.39mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.73mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.4V |
| Typical Gate Charge @ Vgs | 6.7 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |