MICROCHIP TECHNOLOGY Transistor: N-MOSFET; unipolar; 450V; 136mA; Idm: 1.6A; 740mW; TO92 [DN3545N3-G]

Supertex N-Channel Depletion Mode MOSFET Transistors The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds. Features High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Typical Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecoms The Microchip DN3545 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 450V and static drain-to-source on-state resistance of 35Ω. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Lead (Pb)-free 3-lead TO-92 package MOSFET Transistors, Microchip