BSH111BKR N-Channel MOSFET, 335 mA, 55 V BSH111BK, 3-Pin SOT-23 Nexperia [BSH111BKR]; 170-4850
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 335 mA |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-236AB |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1.45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 10 V |
| Number of Elements per Chip | 1 |
| Height | 1mm |
| Maximum Operating Temperature | +150 °C |
| Series | BSH111BK |
| Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Width | 1.4mm |
| Length | 3mm |