NEXPERIA Transistor: NPN; bipolar; 100V; 10A; LFPAK56,PowerSO8,SOT669 [PHPT61010NYX]
100 V, 10 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61010PY High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified.
100 V, 10 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61010PY
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.