NEXPERIA Transistor: PNP; bipolar; 100V; 10A; LFPAK56,PowerSO8,SOT669 [PHPT61010PYX]
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge. 100 V, 10 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
100 V, 10 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY.
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement