PMGD290XN,115 Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia [PMGD290XN,115]; 166-0612
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 860 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 350 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 410 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Width | 1.35mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 0.72 nC @ 4.5 V |
| Length | 2.2mm |
| Transistor Material | Si |
| Height | 1mm |
| Maximum Operating Temperature | +150 °C |