PSMN1R7-30YL,115 N-Channel MOSFET, 100 A, 30 V, 4-Pin SOT-669 Nexperia [PSMN1R7-30YL,115]; 798-2912
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 2.4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.15V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 109 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.1mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 77.9 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 5mm |
| Height | 1.1mm |