ON Semiconductor, BC847BPDW1T3G [BC847BPDW1T3G]; 186-9370
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | NPN + PNP |
| Maximum DC Collector Current | 100 (Continuous) mA, 200 (Peak) mA |
| Maximum Collector Emitter Voltage | 45 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 380 mW |
| Minimum DC Current Gain | 200 |
| Maximum Collector Base Voltage | 50 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Width | 1.35mm |
| Maximum Base Emitter Saturation Voltage | 0.9 V |
| Minimum Operating Temperature | -55 °C |
| Maximum Collector Emitter Saturation Voltage | 0.6 V |
| Height | 1mm |
| Dimensions | 2.2 x 1.35 x 1mm |
| Automotive Standard | AEC-Q101 |
| Length | 2.2mm |
| Maximum Operating Temperature | +150 °C |