ON Semiconductor, BCW30LT1G [BCW30LT1G]; 186-8637
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | PNP |
| Number of Elements per Chip | 1 |
| Maximum Continuous Collector Current | -100 mA |
| Maximum Collector Emitter Voltage | -32 V dc |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Minimum DC Current Gain | 215 |
| Maximum Power Dissipation | 300 mW |
| Transistor Configuration | Single |
| Maximum Collector Emitter Saturation Voltage | -0.3 V dc |
| Maximum Emitter Base Voltage | -5 V |
| Configuration | Single |
| Height | 1.01mm |
| Automotive Standard | AEC-Q101 |
| Length | 3.04mm |
| Dimensions | 3.04 x 1.4 x 1.01mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Width | 1.4mm |