ECH8695R-TL-W Dual N-Channel MOSFET, 11 A, 24 V, 8-Pin ECH ON Semiconductor [ECH8695R-TL-W]; 162-9952
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 24 V |
| Package Type | ECH |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 1.4 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -12.5 V, +12.5 V |
| Number of Elements per Chip | 2 |
| Height | 0.9mm |
| Width | 2.3mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 10 nC @ 4.5 V |
| Length | 2.9mm |
| Transistor Material | Si |