FCB199N65S3 N-Channel MOSFET, 14 A, 650 V, 2+Tab-Pin D2PAK ON Semiconductor [FCB199N65S3]; 172-3419
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK |
| Mounting Type | Surface Mount |
| Pin Count | 2 + Tab |
| Maximum Drain Source Resistance | 199 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 98 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 9.65mm |
| Maximum Operating Temperature | +150 °C |
| Height | 4.83mm |
| Length | 10.67mm |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |