FCD4N60TM N-Channel MOSFET, 3.9 A, 600 V SuperFET, 3-Pin DPAK ON Semiconductor [FCD4N60TM]; 124-1461
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.9 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.2 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 12.8 nC @ 10 V |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +150 °C |
| Width | 6.22mm |
| Series | SuperFET |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.4V |
| Height | 2.39mm |