FCD600N60Z N-Channel MOSFET, 7.4 A, 600 V SuperFET II, 3-Pin DPAK ON Semiconductor [FCD600N60Z]; 774-1146
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7.4 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 89 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +30 V |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +150 °C |
| Series | SuperFET II |
| Height | 2.39mm |