FCP190N60E N-Channel MOSFET, 20 A, 600 V SuperFET II, 3-Pin TO-220 ON Semiconductor [FCP190N60E]; 145-5329
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 208 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 4.83mm |
| Length | 10.67mm |
| Maximum Operating Temperature | +150 °C |
| Height | 9.4mm |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Transistor Material | Si |
| Series | SuperFET II |