FCPF165N65S3L1 Dual N-Channel MOSFET, 19 A, 650 V SuperFET III, 3-Pin TO220F ON Semiconductor [FCPF165N65S3L1]; 146-4114
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO220F |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 165 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 35 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V ac/dc |
| Number of Elements per Chip | 2 |
| Length | 10.3mm |
| Width | 4.6mm |
| Height | 15.7mm |
| Series | SuperFET III |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 35 @ 10 V nC |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |