FCU850N80Z N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK ON Semiconductor [FCU850N80Z]; 172-3430
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 800 V |
| Package Type | IPAK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 850 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 75 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V dc, ±30 V ac |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Width | 2.5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 7.57mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.8mm |