FDA28N50F N-Channel MOSFET, 28 A, 500 V UniFET, 3-Pin TO-3PN ON Semiconductor [FDA28N50F]; 145-4399
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 175 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 310 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Series | UniFET |
| Length | 15.8mm |
| Height | 20.1mm |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |