FDA50N50 N-Channel MOSFET, 48 A, 500 V UniFET, 3-Pin TO-3P ON Semiconductor [FDA50N50]; 124-1746
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 48 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 105 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 625 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Series | UniFET |
| Width | 4.8mm |
| Height | 19.9mm |
| Minimum Operating Temperature | -55 °C |
| Length | 15.6mm |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V |