FDC6561AN Dual N-Channel MOSFET, 2.5 A, 30 V PowerTrench, 6-Pin SOT-23 ON Semiconductor [FDC6561AN]; 166-2973
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 152 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 960 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 1.7mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Series | PowerTrench |
| Height | 1mm |
| Typical Gate Charge @ Vgs | 2.3 nC @ 5 V |
| Length | 3mm |