FDD306P P-Channel MOSFET, 6.7 A, 12 V PowerTrench, 3-Pin DPAK ON Semiconductor [FDD306P]; 166-2398
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6.7 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 52 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 6.22mm |
| Height | 2.39mm |
| Series | PowerTrench |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V |