FDD6N25TM N-Channel MOSFET, 4.4 A, 250 V UniFET, 3-Pin DPAK ON Semiconductor [FDD6N25TM]; 166-3414
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.1 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Transistor Material | Si |
| Length | 6.73mm |
| Height | 2.39mm |
| Minimum Operating Temperature | -55 °C |
| Width | 6.22mm |
| Series | UniFET |
| Maximum Operating Temperature | +150 °C |