FDG6306P Dual P-Channel MOSFET, 600 mA, 20 V PowerTrench, 6-Pin SOT-363 (SC-70) ON Semiconductor [FDG6306P]; 166-2702
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 600 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 (SC-70) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 700 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 300 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 1.4 nC @ 4.5 V |
| Height | 1mm |
| Series | PowerTrench |
| Maximum Operating Temperature | +150 °C |
| Width | 1.25mm |
| Length | 2mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |