FDMC8200S Dual N-Channel MOSFET, 23 A, 46 A, 30 V PowerTrench, SyncFET, 8-Pin Power 33 ON Semiconductor [FDMC8200S]; 166-2516
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 23 A, 46 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | Power 33 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.5 mΩ, 32 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.9 W, 2.5 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Height | 0.75mm |
| Width | 3mm |
| Transistor Material | Si |
| Series | PowerTrench, SyncFET |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 7.3 nC @ 10 V, 15.7 nC @ 10 V |