FDME1023PZT Dual P-Channel MOSFET, 2.6 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor [FDME1023PZT]; 166-2712
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2.6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | MicroFET Thin |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 530 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.4 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 5.5 nC @ 4.5 V |
| Height | 0.5mm |
| Minimum Operating Temperature | -55 °C |
| Length | 1.6mm |
| Maximum Operating Temperature | +150 °C |
| Series | PowerTrench |
| Transistor Material | Si |
| Width | 1.6mm |