FDMS1D4N03S Dual N-Channel MOSFET, 211 A, 30 V PowerTrench, 8-Pin PQFN ON Semiconductor [FDMS1D4N03S]; 146-4094
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 211 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PQFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.09 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±16 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 102 @ 10 V nC |
| Series | PowerTrench |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Forward Diode Voltage | 1.3V |
| Width | 5.85mm |
| Height | 1.05mm |