FDMS4435BZ P-Channel MOSFET, 35 A, 30 V PowerTrench, 8-Pin Power 56 ON Semiconductor [FDMS4435BZ]; 759-9620
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | Power 56 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 37 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 39 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 6mm |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Series | PowerTrench |
| Height | 1.05mm |