FDMS8090 Dual N-Channel MOSFET, 40 A, 100 V PowerTrench, 8-Pin Power 56 ON Semiconductor [FDMS8090]; 124-1439
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | Power 56 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 59 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 6mm |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Height | 0.75mm |
| Series | PowerTrench |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |