FDMS86263P P-Channel MOSFET, 22 A, 150 V PowerTrench, 8-Pin Power 56 ON Semiconductor [FDMS86263P]; 124-1442
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | Power 56 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 94 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Width | 5.85mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Series | PowerTrench |
| Transistor Material | Si |