FDN5618P P-Channel MOSFET, 1.25 A, 60 V PowerTrench, 3-Pin SOT-23 ON Semiconductor [FDN5618P]; 166-1716
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.25 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 170 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8.6 nC @ 10 V |
| Series | PowerTrench |
| Height | 0.94mm |
| Maximum Operating Temperature | +150 °C |
| Length | 2.92mm |