FDP10N60NZ N-Channel MOSFET, 10 A, 600 V UniFET, 3-Pin TO-220 ON Semiconductor [FDP10N60NZ]; 145-5405
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 750 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 185 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Series | UniFET |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Width | 4.9mm |
| Length | 10.36mm |
| Transistor Material | Si |
| Height | 16.07mm |