FDS6576 P-Channel MOSFET, 11 A, 20 V PowerTrench, 8-Pin SOIC ON Semiconductor [FDS6576]; 145-5691
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 14 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Width | 4mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Height | 1.5mm |
| Series | PowerTrench |
| Typical Gate Charge @ Vgs | 43 nC @ 4.5 V |