FDS6900AS Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V PowerTrench, SyncFET, 8-Pin SOIC ON Semiconductor [FDS6900AS]; 166-2446
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6.9 A, 8.2 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 22 mΩ, 27 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Series | PowerTrench, SyncFET |
| Width | 3.99mm |
| Height | 1.5mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V, 11 nC @ 10 V |