FDS89161LZ Dual N-Channel MOSFET, 2.7 A, 100 V PowerTrench, 8-Pin SOIC ON Semiconductor [FDS89161LZ]; 166-2870
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.7 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 182 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 31 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Length | 4.9mm |
| Maximum Operating Temperature | +150 °C |
| Series | PowerTrench |
| Height | 1.575mm |
| Typical Gate Charge @ Vgs | 2.1 nC @ 5 V, 38 nC @ 10 V |
| Width | 3.9mm |
| Minimum Operating Temperature | -55 °C |