FDS8958B Dual N/P-Channel MOSFET, 4.5 A, 6.4 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor [FDS8958B]; 166-3211
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.5 A, 6.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 39 mΩ, 80 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.6 W, 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -25 V, -20 V, +20 V, +25 V |
| Number of Elements per Chip | 2 |
| Series | PowerTrench |
| Width | 3.9mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V, 14 nC @ 10 V |
| Height | 1.575mm |
| Transistor Material | Si |
| Length | 4.9mm |
| Maximum Operating Temperature | +150 °C |