FDV302P P-Channel MOSFET, 120 mA, 25 V, 3-Pin SOT-23 ON Semiconductor [FDV302P]; 166-2480
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 10 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.65V |
| Maximum Power Dissipation | 350 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +8 V |
| Number of Elements per Chip | 1 |
| Width | 1.3mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 2.92mm |
| Typical Gate Charge @ Vgs | 0.22 nC @ 4.5 V |
| Height | 0.93mm |
| Maximum Operating Temperature | +150 °C |