ON Semiconductor FGA30N65SMD IGBT, 60 A 650 V, 3-Pin TO-3PN [FGA30N65SMD]; 146-2045
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 300 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Length | 16.2mm |
| Width | 5mm |
| Height | 20.1mm |
| Dimensions | 16.2 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |