ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03 [FGH60T65SQD-F155]; 178-4259
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 333 W |
| Number of Transistors | 1 |
| Package Type | TO-247 G03 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Length | 15.87mm |
| Width | 4.82mm |
| Height | 20.82mm |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Energy Rating | 50µJ |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 3813pF |
| Maximum Operating Temperature | +175 °C |