ON Semiconductor FGH75T65SQDNL4 P-Channel IGBT, 200 A 650 V, 4-Pin TO-247 [FGH75T65SQDNL4]; 181-1929
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Length | 15.8mm |
| Width | 5.2mm |
| Height | 22.74mm |
| Dimensions | 15.8 x 5.2 x 22.74mm |
| Gate Capacitance | 5100pF |
| Energy Rating | 160µJ |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |