FQA170N06 N-Channel MOSFET, 170 A, 60 V QFET, 3-Pin TO-3PN ON Semiconductor [FQA170N06]; 146-1965
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 170 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Length | 15.8mm |
| Minimum Operating Temperature | -55 °C |
| Width | 5mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 220 nC @ 10 V |
| Height | 18.9mm |
| Series | QFET |
| Maximum Operating Temperature | +175 °C |