FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor [FQB4N80TM]; 146-2064
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.9 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.6 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 3.13 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Series | QFET |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Height | 4.83mm |
| Minimum Operating Temperature | -55 °C |