FQD12N20LTM N-Channel MOSFET, 9 A, 200 V QFET, 3-Pin DPAK ON Semiconductor [FQD12N20LTM]; 124-1718
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.375 |
| Maximum Drain Source Voltage | 200 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 280 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Series | QFET |
| Height | 2.3mm |
| Length | 6.6mm |
| Minimum Operating Temperature | -55 °C |
| Width | 6.1mm |
| Typical Gate Charge @ Vgs | 16 nC @ 5 V |