FQP2N60C N-Channel MOSFET, 2 A, 600 V QFET, 3-Pin TO-220AB ON Semiconductor [FQP2N60C]; 145-4525
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.7 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 54 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Width | 4.7mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V |
| Height | 9.4mm |
| Series | QFET |
| Length | 10.1mm |