FQP8P10 P-Channel MOSFET, 5.7 A, 100 V QFET, 3-Pin TO-220 ON Semiconductor [FQP8P10]; 166-2169
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 5.7 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 530 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 65 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | QFET |
| Height | 16.3mm |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Length | 10.67mm |
| Minimum Operating Temperature | -55 °C |
| Width | 4.7mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |