FQT2P25TF P-Channel MOSFET, 550 mA, 250 V QFET, 3+Tab-Pin SOT-223 ON Semiconductor [FQT2P25TF]; 166-3384
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 550 mA |
| Maximum Drain Source Voltage | 250 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 3.7mm |
| Transistor Material | Si |
| Height | 1.8mm |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V |
| Length | 6.7mm |
| Series | QFET |
| Maximum Operating Temperature | +150 °C |