FQT7N10LTF N-Channel MOSFET, 1.7 A, 100 V QFET, 3+Tab-Pin SOT-223 ON Semiconductor [FQT7N10LTF]; 671-1062
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.7 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 350 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 3.56mm |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Series | QFET |
| Height | 1.6mm |
| Typical Gate Charge @ Vgs | 4.6 nC @ 5 V |