FQU13N06LTU N-Channel MOSFET, 11 A, 60 V QFET, 3-Pin IPAK ON Semiconductor [FQU13N06LTU]; 166-1855
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 115 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 2.3mm |
| Transistor Material | Si |
| Length | 6.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Series | QFET |
| Typical Gate Charge @ Vgs | 4.8 nC @ 5 V |
| Height | 6.1mm |