FQU2N100TU N-Channel MOSFET, 1.6 A, 1000 V QFET, 3-Pin IPAK ON Semiconductor [FQU2N100TU]; 145-4617
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.6 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | QFET |
| Width | 2.5mm |
| Height | 7.57mm |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Length | 6.8mm |