FQU2N60CTU N-Channel MOSFET, 1.9 A, 600 V QFET, 3-Pin IPAK ON Semiconductor [FQU2N60CTU]; 145-5532
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.7 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 2.3mm |
| Transistor Material | Si |
| Length | 6.6mm |
| Series | QFET |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 8.5 nC @ 10 V |
| Height | 6.1mm |