ON Semiconductor, MJE5850G [MJE5850G]; 186-7413
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | 8 (Continuous) A, 16 (Peak) A |
| Maximum Collector Emitter Voltage | 350 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 80 W |
| Minimum DC Current Gain | 5 |
| Transistor Configuration | Single |
| Maximum Emitter Base Voltage | 6 V dc |
| Maximum Operating Frequency | 1 kHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Height | 15.75mm |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Maximum Collector Emitter Saturation Voltage | 5 V dc |
| Transistor Material | Si |
| Width | 4.83mm |
| Maximum Base Emitter Saturation Voltage | 1.5 V dc |
| Minimum Operating Temperature | -65 °C |
| Length | 10.53mm |